Fairchild Slashes IGBT Energy Losses to Boost Power Efficiency in Industrial and Automotive
May 19, 2015 | By Business Wire News
NUREMBERG, Germany
Fairchild (NASDAQ: FCS), a leading global supplier of high-performance semiconductor solutions, is slashing energy loss by 30 percent for its 4th generation 650V and 1200V IGBT devices. Using a novel design approach tailored for high and medium/speed switching applications in industrial and automotive markets, Fairchild can deliver industry-leading levels of performance with very strong latch up immunity for superior ruggedness and reliability. Fairchild is demonstrating and presenting the approach with test results of several applications at PCIM Europe 2015.
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“Manufacturers are extremely interested in more advanced IGBTs as any reduction in an IGBT’s switching loss will enable them to improve the efficiency of their products,” said Senior IHS Analyst Victoria Fodale. “Minimizing power losses is naturally key to attaining the highest levels of efficiency in a range of applications from electric vehicles and solar power systems, to highly-efficient HVAC applications and industrial inverters.”
Fairchild is applying an advanced high-density pitch, self-balancing cell build using a novel self-aligned contact technology for extremely high current densities and very favorable dynamic switching features over the whole temperature range from -40º C to 175º C. The new design enables 4th generation IGBTs with excellent low saturation voltage (Vce(sat) = ~ 1.65V) and low switching loss (Eoff = 5µJ/A) trade off characteristics for customers to achieve higher system efficiency. Along with the new generation, Fairchild will also make available a powerful design and simulation infrastructure package calibrated for all low- and high-voltage power devices.
“Fairchild’s new approach involves extremely high electron injection efficiency enhanced by a very fine cell pitch design and hole carrier injection restricted by a new buffer structure,” said Fairchild Fellow Thomas Neyer. “These advances yield significant performance advantages and will enable Fairchild to give manufacturers new solutions for efficiently controlling large amounts of power with our IGBTs.”
Fairchild Design Leader Kevin Lee will present “4th Generation Field Stop (FS) IGBT with High Performance and Enhanced Latch up Immunity” at 1 p.m. on Thursday, May 21, in the Nuremberg Exhibition Center’s Industry Forum Hall 6, booth 345.
Conference attendees can also see a demonstration of the new IGBT technology at Fairchild booth, 9-342.
Product family details for Fairchild FS4 IGBT’s will be made available in Q4 of 2015. More details, including a White Paper detailing Fairchild’s FS4 IGBT Technology, can be found on the Fairchild IGBT product information page.
About Fairchild:
Fairchild has a rich history as a pioneer in the semiconductor industry and that pioneering spirit endures today in our vision for making the world a cleaner and smarter place. We specialize in the development and manufacturing of a complete portfolio of low- to high-power solutions and deliver an amazing design experience to the engineers and system architects who build systems for the mobile, industrial, cloud, automotive, lighting, and computing industries. Our foundation is our guiding principles, which recognizes the inseparability of engaged employees and delighted customers, and encourages our employees to simplify, challenge, explore, play, excel, respect, go fast, and be direct. If you use a smart phone, drive a car, own a modern appliance, live and work in comfortable connected buildings, or enjoy film animation, you have experienced Fairchild’s Power to Amaze. Please visit us on the web at www.fairchild.com. Connect with us on LinkedIn
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Fairchild
Bruce Fienberg, +1 408-822-2075
Director of Communications
bruce.fienberg@fairchildsemi.com
