MRO Magazine

Efficient Power Conversion (EPC) Widens the Performance Gap with 7 mΩ 200 V, and 5 mΩ 150 V Gallium Nitride Power Transistors

By Business Wire News   


Efficient Power Conversion Corporation (EPC) announces the introduction of two eGaN FETs that raise the bar for power conversion performance. These products have a maximum operating temperature of 150°C and pulsed currents capabilities of 260 A (150 V EPC2033) and 140 A (EPC2034). Applications include DC-DC converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, LED lighting, and industrial automation.

These products further expand EPC’s family of “Relaxed Pitch” devices featuring a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6 mm x 4.6 mm footprint.

Part Number  VDS  RDS(on)
 Size  Price
(1K Units)


  150 V   5.0 mOhm   10 nC  

260 A

  2.6 mm x 4.6 mm   $4.25


  200 V   7.0 mOhm   8.5 nC   140 A   2.6 mm x 4.6 mm   $4.37

Development Board

To simplify the evaluation process of these high performance eGaN FETs, the EPC9047 development board is available to support easy “in circuit” performance evaluation of the EPC2033. This board includes all the critical components that can be easily connected into any existing converter.

The EPC9047 is in a half-bridge topology measuring 2” x 1.5”. It contains two EPC2033 eGaN FETs using the Texas Instruments UCC27611 gate driver, as well as supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance and has various probe points to facilitate simple waveform measurement and efficiency calculation.


The EPC2033 and EPC2034 are available for immediate delivery from Digi-Key at

The EPC9047 development board is $137.75 and is available for immediate delivery from Digi-Key at

Design Information and Support for eGaN FETs

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices and was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Efficient Power Conversion Corporation
Joe Engle


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