MRO Magazine

Efficient Power Conversion (EPC) Introduces eGaN® Power Integrated Circuit for a New Benchmark in Efficiency and Cost for A4WP Rezence™ Wireless Power Transfer

July 14, 2015
By Business Wire News


EPC announces the EPC2107 (100 V) and EPC2108 (60 V) eGaN half bridge power integrated circuits with integrated bootstrap FET, eliminating gate driver induced reverse recovery loses as well as the need for a high side clamp. This is the first time that a bootstrap FET has been integrated in an eGaN power circuit.

Designed specifically for resonant wireless power transfer applications, these products enable rapid design of highly efficient end-user systems, setting the stage for mass adoption of wireless power transfer. In addition, these GaN power integrated circuits come in extremely small, chip-scale packages, reducing the size of the overall system. This new line of chips is lower in cost due to reduced overall component count – one GaN device versus three FETs!

Rezence Wireless Power Standard

Although there are several standards for wireless power transfer, the A4WP standard, Rezence, offers superior features and capabilities to end users – the consumer. For example, Rezence allows for spatial freedom when charging, eliminating the need for exact positioning of devices when charging. It also has an exceptional charging range, providing consumers with true ‘drop and go’ charging. Additionally, the standard allows for charging multiple devices with different power requirements simultaneously. Another key feature is that Rezence compliant wireless power systems will charge devices in the presence of metallic objects such as keys, coins, and utensils, making it an ideal choice for automotive, retail, and household applications.

In short, Rezence provides the flexibility and capabilities to bring wireless charging to the masses, a rapidly emerging market that is expected to be a $15.6 B industry by 2020.

EPC’s gallium nitride devices play a major role in this market, having introduced the first eGaN FET for wireless power transfer in 2012. In addition to designing A4WP Rezence compliant power products, EPC has published a Wireless Power Handbook dedicated to addressing wireless power systems design issues such as multi-mode operation and EMI compliance.

EPC’s New Products and Benefits

By integrating two eGaN® power FETs into an integrated power circuit, interconnect inductances and the interstitial space needed on the PCB are eliminated. Having this single integrated power component increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the wireless power system designer’s end product.



   VDS    RDS(on) (Typical)    QOSS (Typical)

Q1 Control

    Q2 Sync.



Q1 Control


Q2 Sync.



EPC2107     100 V     240 mΩ     240 mΩ     2.1 Ω     800 pC     1400 pC     140 pC
EPC2108     60 V     150 mΩ     150 mΩ     2.1 Ω     650 pC     1000 pC     100 pC

These devices come in 1.35 mm x 1.35 mm chip-scale package for reduced size, improved switching speed, and thermal performance leading to increased power density.

Wireless Power Demonstration Systems

In support of the EPC2107 and EPC2108 integrated circuits, EPC also offers complete demonstration wireless power transfer systems, as well as development boards for the evaluation of these two new eGaN power integrated circuits.

The A4WP Class 3 (EPC9113) or A4WP Class 2 (EPC9114) wireless power demonstration systems have three components:

  • ZVS Class-D Source (or amplifier) board
  • Class 2 or 3 Rezence compliant source (or transmit) coil
  • Category 3 Rezence compliant device (or receiving) board including coil

The EPC9113 wireless power demonstration kit is A4WP Class 3 compliant, capable of delivering up to 16 W into a DC load while operating at 6.78 MHz (which can be modified to operate at 13.56 MHz), while the EPC9114 wireless power demonstration kit is A4WP Class 2 compliant at 10 W. The purpose of the demonstration kit is to simplify the evaluation process of using eGaN FETs for highly efficient wireless power transfer. Both kits utilize the high frequency switching capability of EPC gallium nitride transistors to facilitate high efficiency wireless power systems.

For customers with their own coil design, the source (or amplifier) boards are also sold separately as EPC9509 (featuring the 60 V EPC2108) and EPC9510 (featuring the 100 V EPC2107).

Product Price and Availability

Part Number     Description     Price


    100 V monolithic half-bridge with integrated bootstrap FET     $0.89 (1K units)


    Wireless power demonstration kit     $895.00 each


    ZVS Class-D Source (amplifier) board     $418.95 each


    60 V monolithic half-bridge with integrated bootstrap FET     $0.85 (1K units)


    Wireless power demonstration kit     $895.00 each


    ZVS Class-D Source (amplifier) board     $418.95 each

All products are available for immediate delivery from Digi-Key at

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Efficient Power Conversion
Joe Engle, 310-986-0350