Efficient Power Conversion (EPC) Expands Wide Pitch eGaN FET® Family Enabling High Current in Small Footprint

May 21, 2015 | By Business Wire News

EL SEGUNDO, Calif.

Efficient Power Conversion Corporation (EPC) announces the introduction of three eGaN FETs designed with a wider pitch connection layout. These products expand EPC’s family of “Relaxed Pitch” devices featuring a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6 mm x 4.6 mm footprint.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, these products are much smaller and have many times superior switching performance. They are ideal for applications such as high frequency DC-DC converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, and class-D audio.

Part
Number

V_DS

R_DS(on)
(typical)

Q_G
(typical)

I_D
(Pulsed)

Price
(1K Units)

EPC2030

40 V

1.8 mOhm

18 nC

495 A

$3.46

EPC2031

60 V

2.0 mOhm

17 nC

450 A

$3.48

EPC2032

100 V

3.0 mOhm

14 nC

300 A

$3.52

Availability

All three products are available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Information and Support for eGaN FETs:

Download datasheets at http://epc-co.com/epc/Products/eGaNFETs.aspx

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices and was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

www.epc-co.com

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.