MRO Magazine

Efficient Power Conversion (EPC) Expands Wide Pitch eGaN FET® Family Enabling High Current in Small Footprint

May 21, 2015
By Business Wire News


Efficient Power Conversion Corporation (EPC) announces the introduction of three eGaN FETs designed with a wider pitch connection layout. These products expand EPC’s family of “Relaxed Pitch” devices featuring a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6 mm x 4.6 mm footprint.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, these products are much smaller and have many times superior switching performance. They are ideal for applications such as high frequency DC-DC converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, and class-D audio.





(1K Units)


40 V 1.8 mOhm 18 nC 495 A $3.46


60 V 2.0 mOhm 17 nC 450 A $3.48


    100 V     3.0 mOhm     14 nC     300 A     $3.52


All three products are available for immediate delivery from Digi-Key at

Design Information and Support for eGaN FETs:

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices and was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Efficient Power Conversion Corporation
Joe Engle, 310-986-0350